INFLUENCE OF CAP-LAYER DOPING ON OHMIC CONTACTS FOR INP BASED HEMT STRUCTURES

Authors
KLEPSER BUH BERGAMASCHI C PATRICK W
Citation
Buh. Klepser et al., INFLUENCE OF CAP-LAYER DOPING ON OHMIC CONTACTS FOR INP BASED HEMT STRUCTURES, Solid-state electronics, 37(12), 1994, pp. 1905-1906
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
12
Year of publication
1994
Pages
1905 - 1906
Database
ISI
SICI code
0038-1101(1994)37:12<1905:IOCDOO>2.0.ZU;2-1
Abstract
Ohmic contacts to lattice matched InP based HEMT structures with both doped and undoped GaInAs cap-layers have been investigated. Contact re sistances as low as 0.09 Omega mm were achieved using annealed Ni-Ge-A u ohmic contacts. It is reported that the contact resistance is indepe ndent of the doping of the thin (50-100 Angstrom) cap-layer. This indi cates that it is the bandgap and not the doping of the cap-layer, whic h determines the contact resistance to the HEMT structure. Furthermore it was shown, that the contact resistance is reduced for lower sheet resistances of the 2DEG.