Fjg. Sanchez et al., EXTRACTING THE SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 37(12), 1994, pp. 1943-1948
We present a simple method to extract the effective channel length and
the gate voltage dependent series resistance of p-channel MOSFETs, Th
e method is used at room and at liquid nitrogen temperatures on device
s with mask channel lengths in the range of 0.6-2.0 mu m. The good agr
eement found at 77 and 300 K between the experimental drain current-vo
ltage characteristics of the devices and those computed from the extra
cted parameter verifies the validity of the method.