EXTRACTING THE SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS AT LIQUID-NITROGEN TEMPERATURE

Authors
SANCHEZ FJG ORTIZCONDE A NUNEZ MG ANDERSON RL
Citation
Fjg. Sanchez et al., EXTRACTING THE SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 37(12), 1994, pp. 1943-1948
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
12
Year of publication
1994
Pages
1943 - 1948
Database
ISI
SICI code
0038-1101(1994)37:12<1943:ETSRAE>2.0.ZU;2-3
Abstract
We present a simple method to extract the effective channel length and the gate voltage dependent series resistance of p-channel MOSFETs, Th e method is used at room and at liquid nitrogen temperatures on device s with mask channel lengths in the range of 0.6-2.0 mu m. The good agr eement found at 77 and 300 K between the experimental drain current-vo ltage characteristics of the devices and those computed from the extra cted parameter verifies the validity of the method.