FABRICATION OF SUBMICRON JUNCTIONS - PROXIMITY RAPID THERMAL-DIFFUSION OF PHOSPHORUS, BORON, AND ARSENIC

Various techniques used in fabrication of deep submicron junctions are reviewed with respect to their advantages and disadvantages in silico n very large scale integration.(VLSI) circuits technology, Proximity r apid thermal diffusion is then presented as an alternative process whi ch. results in very shallow junctions with high dopant concentrations at the surface, The feasibility of Si doping with B, P, and As for bot h planar arid 3-D structures such as trench capacitors used in high de nsity DRAM memories is shown based on sheet resistance measurements, s econdary ion mass spectroscopy and scanning electron micrographs, Reta rdation effect of arsenic diffusion similar to the well known inhibiti on of silicon or SiO2 deposition in chemical vapor deposition (CVD) pr ocesses is identified and discussed,