ROOM-TEMPERATURE ELECTROABSORPTION IN A GEXSI1-X PIN PHOTODIODE

Authors
MURTAZA S MAYER R RASHED M KINOSKY D MAZIAR C BANERJEE S TASCH A CAMPBELL JC BEAN JC PETICOLAS LJ
Citation
S. Murtaza et al., ROOM-TEMPERATURE ELECTROABSORPTION IN A GEXSI1-X PIN PHOTODIODE, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2297-2300
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
12
Year of publication
1994
Pages
2297 - 2300
Database
ISI
SICI code
0018-9383(1994)41:12<2297:REIAGP>2.0.ZU;2-W
Abstract
We present room temperature electroabsorption measurements in a Ge0.2S i0.8 pin photodiode, The results appear to be very similar to those re ported earlier on GexSi (1-x)/Si multiple quantum wells.