HOT-CARRIER-INJECT OXIDE REGION IN FRONT AND BACK INTERFACES IN ULTRA-THIN (50 NM), FULLY DEPLETED, DEEP-SUBMICRON NMOS AND PMOSFETS SIMOX AND THEIR HOT-CARRIER IMMUNITY/

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFE T's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influ ence of these injected carriers on front-channel properties is investi gated, NMOSFET degradation is shown to be caused dy hot-carriers injec ted into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide, Additionally, it is shown experimentally that these f ully depleted devices with effective channel lengths between 0.1-0.2 m u m have fairly high hot-carrier immunity, even for single-drain struc tures.