INFLUENCE OF LATTICE SELF-HEATING AND HOT-CARRIER TRANSPORT ON DEVICEPERFORMANCE

As device technologies improve, the traditional drift-diffusion transp ort model becomes inadequate to predict the performance of state-of-th e-art semiconductor devices, The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena: For more accurat e prediction on device performance, a new device simulator capable of full thermodynamic simulation was developed, The carrier and carrier e nergy transport equations are directly derived from the Boltzmann tran sport equation, and the energy transfer among electrons, holes and cry stal lattice takes into account most of the all possible mechanisms, T his simulator was used to simulate the de behavior of a BJT and a half -micron NMOS. The simulation results show that for advanced devices, n ot only the drift-diffusion model becomes inadequate, but including on ly one of the two thermal effects results in error in simulated device characteristics.