TURNOFF TRANSIENT CHARACTERISTICS OF COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR

Authors
LI ZJ DU J
Citation
Zj. Li et J. Du, TURNOFF TRANSIENT CHARACTERISTICS OF COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2468-2471
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
12
Year of publication
1994
Pages
2468 - 2471
Database
ISI
SICI code
0018-9383(1994)41:12<2468:TTCOCI>2.0.ZU;2-H
Abstract
An analytical model used for analyzing the fast turnoff transient char acteristics of the complementary insulated-gate bipolar transistor (CI GBT) [1] is proposed, accounting for the transient charge-sharing effe ct and the back-injection effect. The normalized turnoff transient cur rent of the CIGBT is obtained, which is in agreement with the enhanced SPICE3 simulated results and the experiment. The relationships of the turnoff time To with the device parameters are given. The modeling me thodology is also applicable to the mixed LIGBT/LDMOS.