MILLERS APPROXIMATION IN ADVANCED BIPOLAR-TRANSISTORS UNDER NONLOCAL IMPACT IONIZATION, CONDITIONS

Authors
KUMAR MJ ROULSTON DJ
Citation
Mj. Kumar et Dj. Roulston, MILLERS APPROXIMATION IN ADVANCED BIPOLAR-TRANSISTORS UNDER NONLOCAL IMPACT IONIZATION, CONDITIONS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2471-2473
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
12
Year of publication
1994
Pages
2471 - 2473
Database
ISI
SICI code
0018-9383(1994)41:12<2471:MAIABU>2.0.ZU;2-C
Abstract
Using a modified ionization model based on nonlocal impact ionization conditions, Miller's relationship is reexamined for doping concentrati ons (greater than or equal to 10(17)/cm(3)) used in advanced bipolar t ransistors. For the useful range of current gains (0.1 > 1 - 1/M > 0.0 05), the empirical parameter n in Miller's relationship, evaluated und er nonlocal impact ionization conditions is shown to be considerably d ifferent from that obtained using standard ionization rates.