SIMULATION OF HIGH-EFFICIENCY N(-PHOSPHIDE SOLAR-CELL RESULTS AND FUTURE IMPROVEMENTS()P INDIUM)

Authors
Citation
Rk. Jain et Dj. Flood, SIMULATION OF HIGH-EFFICIENCY N(-PHOSPHIDE SOLAR-CELL RESULTS AND FUTURE IMPROVEMENTS()P INDIUM), I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2473-2475
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
41
Issue
12
Year of publication
1994
Pages
2473 - 2475
Database
ISI
SICI code
0018-9383(1994)41:12<2473:SOHNSR>2.0.ZU;2-R
Abstract
A simulation of the highest efficiency (19.1% AMO) n(+)p indium phosph ide (InP) solar cell was made using a computer code PC-1D in order to understand it and suggest future improvements to it. Available cell de sign and process data aas used in the simulation. Minority carrier dif fusion lengths in the emitter and base have been varied to match the e xperimental cell I-V characteristics with the calculated results. To f urther understand and improve the InP cell efficiency, simulations wer e performed using improved values of cell material and process paramet ers. We show that the efficiency of this cell could be increased to mo re than 23% AMO by incorporating the suggested cell material, design a nd process improvements. At these high efficiencies InP cell technolog y will be very attractive for space use.