Rk. Jain et Dj. Flood, SIMULATION OF HIGH-EFFICIENCY N(-PHOSPHIDE SOLAR-CELL RESULTS AND FUTURE IMPROVEMENTS()P INDIUM), I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2473-2475
A simulation of the highest efficiency (19.1% AMO) n(+)p indium phosph
ide (InP) solar cell was made using a computer code PC-1D in order to
understand it and suggest future improvements to it. Available cell de
sign and process data aas used in the simulation. Minority carrier dif
fusion lengths in the emitter and base have been varied to match the e
xperimental cell I-V characteristics with the calculated results. To f
urther understand and improve the InP cell efficiency, simulations wer
e performed using improved values of cell material and process paramet
ers. We show that the efficiency of this cell could be increased to mo
re than 23% AMO by incorporating the suggested cell material, design a
nd process improvements. At these high efficiencies InP cell technolog
y will be very attractive for space use.