Th. Wang et al., INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2475-2477
An interface trap assisted tunneling mechanism which includes hole tun
neling from interface traps to the valence band and electron tunneling
from interface traps to the conduction band is presented to model the
drain leakage current in a 0.5 mu m LATID N-MOSFET. In experiment, th
e interface traps were generated by hot carrier stress, The increased
drain leakage current due to the band-trap-band tunneling can be adequ
ately described by an analytical expression of Delta I-d = A exp(-Bit/
F) with a value of B-it of 13 MV/cm, which is much lower than that (36
MV/cm) of direct band-to-band tunneling.