METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS-ER USING ER(C4H9C5H4)(3)

Authors
FANG XM LI YB LANGER DW SOLOMON JS
Citation
Xm. Fang et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS-ER USING ER(C4H9C5H4)(3), Journal of electronic materials, 23(12), 1994, pp. 1269-1272
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
12
Year of publication
1994
Pages
1269 - 1272
Database
ISI
SICI code
0361-5235(1994)23:12<1269:MCGOGU>2.0.ZU;2-Z
Abstract
Erbium doped GaAs has been grown by metalorganic chemical vapor deposi tion using a novel liquid precursor: Tris(n-butylcyclopentadienyl)erbi um, Er(C4H9C5H4)(3). Erbium doping as high as 1.2 x 10(19)cm(-3) has b een realized. The morphology was excellent at growth temperatures near 620 degrees C. The erbium concentration was found to depend on growth temperatures due to incomplete pyrolysis of the erbium metalorganic c ompound. The erbium-related PL intensity was decreased when the erbium concentration exceeded similar to 1.2 x 10(19)cm(-3).