DETERMINATION OF OXYGEN CONCENTRATION IN HEAVILY SB-DOPED SI BY MEANSOF COINCIDENT ELASTIC RECOIL DETECTION ANALYSIS

C-12 With energy of 27 MeV was used as incident particle beam, the oxy gen concentration [O] in heavily Sb-doped silicon was determined quant itatively by the method of coincident elastic recoil detection analysi s (CERDA). It was confirmed that the oxygen concentration in the heavi ly Sb-doped silicon was about 40% lower than in the lightly doped Czoc hralski grown silicon (CZ-Si), and decreased with increasing content o f Sb. In addition, the measurement principle of CERDA and factors infl uencing the testing precision were analyzed and discussed.