ANALYSIS OF NEW HIGH-VOLTAGE BIPOLAR SILICON-ON-INSULATOR TRANSISTOR WITH FULLY DEPLETED COLLECTOR

A new type of high voltage bipolar transistor for implementation in SO I material (Silicon-On-Insulator) has been developed. It is shown by m easurements on fabricated structures and by numerical device simulatio ns that the current drive capability of such a transistor is comparabl e to what has been achieved in a conventional transistor with buried l ayer and plug or in any optimized lateral transistor with buried emitt er and collector layers. The new type of transistor designed in a few micrometer thick silicon layer has a breakdown voltage BVCEO in excess of several hundreds volts and also a remarkably high Early voltage of about 400 volts. This unique Early voltage is also explained in detai l by a new analytical model. The transistor is expected to have a stro ng impact on the feasibility to realize mixed analog and digital signa l circuits with high and low voltage functions on the same chip.