ON THE NONIDEAL CHARACTERISTICS OF SCHOTTKY-BARRIER-GATE DIODES IN IN0.52AL0.48AS IN(0.53)GA(0.47)AS HETEROSTRUCTURE FETS ON INP SUBSTRATES/

Authors
SUNG R DAS MB
Citation
R. Sung et Mb. Das, ON THE NONIDEAL CHARACTERISTICS OF SCHOTTKY-BARRIER-GATE DIODES IN IN0.52AL0.48AS IN(0.53)GA(0.47)AS HETEROSTRUCTURE FETS ON INP SUBSTRATES/, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 188-190
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
1
Year of publication
1995
Pages
188 - 190
Database
ISI
SICI code
0018-9383(1995)42:1<188:OTNCOS>2.0.ZU;2-C
Abstract
We report results of determination of the zero-field barrier heights o f Schottky-barrier-gate-diodes in InAlAs/InGaAs heterostructure modula tion doped FET's by exploiting their temperature dependent I-V charact eristics. The held-emission model has been found to account for the ga te current flow mechanism particularly at temperatures below 200 K. Us ing this model the influence of the InAlas/InGaAs heterostructure pote ntial barrier on the gate current has been delineated and a possible c ause behind the current's wide-range of variability, from 10(-1) to 10 (2) A/cm(2) within 100 mV forward bias, has been suggested.