AN ANALYTICAL METHOD FOR 2-DIMENSIONAL FIELD DISTRIBUTION OF A MOS STRUCTURE WITH A FINITE-FIELD PLATE

Authors
CHUNG SK YOO DC CHOI YI
Citation
Sk. Chung et al., AN ANALYTICAL METHOD FOR 2-DIMENSIONAL FIELD DISTRIBUTION OF A MOS STRUCTURE WITH A FINITE-FIELD PLATE, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 192-194
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
1
Year of publication
1995
Pages
192 - 194
Database
ISI
SICI code
0018-9383(1995)42:1<192:AAMF2F>2.0.ZU;2-S
Abstract
An analytical method is presented for two-dimensional field distributi on of a MOS structure with a field plate, which allows explicit equati ons for field components in terms of oxide thickness, depletion width, and field plate length. Useful design curves of breakdown voltage ver sus substrate impurity concentration with oxide thickness and plate le ngth as parameters are provided.