HOT-CARRIER-INDUCED SERIES RESISTANCE ENHANCEMENT MODEL (HISREM) OF NMOSFETS FOR CIRCUIT SIMULATIONS AND RELIABILITY PROJECTIONS

This paper proposes a physically realizable reliability model of nMOSF ET's that is applicable for reliability projections in IC design. We h ave devised a hot-carrier induced series (drain) resistance enhancemen t model (HISREM) which is based on the increase of the interface trapp ed charge (Delta Nit) near the drain region and is physically realizab le in circuit simulations of the hot-carrier induced degradation under operating conditions. The proposed HISREM requires only one parameter (Delta Nit) for reliability projections in TC design without extracti on of a set of stressed parameter files. The proposed HISREM shows a g ood agreement between the simulation results from SPICE and experiment data of the hot-carrier induced degradation of device characteristics . The HISREM has been demonstrated by employing a NMOS inverter and a conventional CMOS operational amplifier. The HISREM is shown to be muc h simpler and more efficient for reliability projections in both digit al and analog IC design rather than the commercial reliability simulat or with parameter degradation models which require extraction of a set of stressed parameter files(i.e., Vto, gamma mu(O), theta, V-max kapp a).