ZnS films were prepared by the hot wall evaporation technique onto gla
ss substrates at various temperatures in order to determine the optimu
m deposition conditions for preparation of stoichiometric films. The f
ilms predominantly had the zinc blende structure, and the surface roug
hness was found to decrease with increasing deposition temperature. In
dium doping was found to increase the carrier concentration by one ord
er of magnitude. The built-in electric field and mechanical stress wer
e found to play an important role in describing the absorption tail in
these polycrystalline films. The values of the density of trap states
and the barrier height at the grain boundaries were determined.