STUDY OF TUNNELING CURRENT OSCILLATION DEPENDENCE ON SIO2 THICKNESS AND SI ROUGHNESS AT THE SI SIO2 INTERFACE

Authors
ZAFAR S LIU Q IRENE EA
Citation
S. Zafar et al., STUDY OF TUNNELING CURRENT OSCILLATION DEPENDENCE ON SIO2 THICKNESS AND SI ROUGHNESS AT THE SI SIO2 INTERFACE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(1), 1995, pp. 47-53
Citations number
14
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
1
Year of publication
1995
Pages
47 - 53
Database
ISI
SICI code
0734-2101(1995)13:1<47:SOTCOD>2.0.ZU;2-R