THE INCLUSION OF A FINITE CAPTURE TIME IN THE NUMERICAL-SIMULATION OFQUANTUM EFFECT DEVICES

Citation
M. Gault et al., THE INCLUSION OF A FINITE CAPTURE TIME IN THE NUMERICAL-SIMULATION OFQUANTUM EFFECT DEVICES, Solid-state electronics, 38(1), 1995, pp. 9-15
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
38
Issue
1
Year of publication
1995
Pages
9 - 15
Database
ISI
SICI code
0038-1101(1995)38:1<9:TIOAFC>2.0.ZU;2-P
Abstract
A simple numerical method is presented to include the phenomenon of a finite quantum well capture time in the numerical simulation of quantu m effect devices. If the time taken to leave the quantum well (through tunnelling) is sufficiently short the electron states in the quantum well will remain relatively unoccupied due to the finite scattering ti me from the three-dimensional continuum into the two-dimensional state s. A numerical formulation is presented which models this phenomenon b y using an effective Fermi function for the occupancy of the two-dimen sional states, enabling the method to be used in conjunction with gene ral purpose device simulators. The method is applied to a simple tunne l barrier to show the generality of the model and a method is proposed to measure the capture time of quantum wells via observing the output energy spectrum.