Silicided shallow p (+) n junctions formed by BF2+ implantation into t
hin Co films on Si substrates to a low dosage (5 x 10(14) cm(-2)) and
subsequent rapid thermal annealing (RTA) or conventional furnace annea
ling (CFA) are used to show the impact of silicides on junction charac
teristics. CFA results in a lower leakage than RTA at a low bias as 5
V at high temperatures attributable to longer annealing time. All the
diodes made by RTA exhibit a hard-breakdown behavior. For CFA 700 degr
ees C annealing, however, an anomalously poor reverse I-V behavior ind
icative of athermal emission is found at high bias. In addition, the 8
00 degrees C-formed diodes and the CFA-treated 1x10(16) cm(-2) implant
ed samples show good reverse characteristics even at high bias. As a r
esult, annealing conditions should be properly chosen to reduce the im
pact of silicides on shallow junctions.