INVESTIGATION OF THE EFFECT OF ELECTRON-HOLE SCATTERING ON CHARGE-CARRIER TRANSPORT IN SEMICONDUCTORS AND SEMICONDUCTOR-DEVICES UNDER LOW INJECTION CONDITIONS

New transport equations for minority charge carriers in n- and p-type semiconductors are proposed. A correct form of the Einstein relation f or minority carriers is established. Based on these results correlatio n between minority- and majority-carrier mobilities in semiconductors is considered. It is shown that electron-hole collisions strongly affe ct the minority carrier transport. Relationships between minority-and majority-carrier mobilities in nondegenerate semiconductors are derive d. Based on these relationships analysis of experimental data obtained in recent years for silicon is carried out. Charge carrier transport in heavily doped regions of silicon devices is investigated. It is sho wn that injection efficiency of p-n junction is strongly affected by e lectron-hole scattering.