THE HETEROCONTACT OF 2 INTRINSIC SEMICONDUCTORS AND RADIATION-STABLE ELECTRONICS

Radiation security is one of the main present day problems. Semiconduc tor devices used nowadays have a very poor radiation stability. Semico nductors of the In2Te3 type attract attention by some unique physical properties. For instance: (1) their physical parameters are not change d under an ionizing radiation of extremely high doses; (2) the concent ration of charge carriers is almost independent of the impurity concen tration; and (3) the electrical resistance of these materials always r emains intrinsic. The properties mentioned are defined by a basic feat ure of their crystal structure, namely that one-third of cation sites in a lattice of the zinc-blend type is vacant. The present paper is th e first theoretical analysis of new electronic elements based on the h eterocontact of two intrinsic semiconductors. Likely the radiation sta ble electronics suggested will become the base of measurement techniqu e for atomic reactors.