PINCH EFFECT IN SILICON P-N-JUNCTION AT SECONDARY BREAKDOWN COMING INTO EXISTENCE

Authors
PURITIS T VOLKS D KAUPUZS J
Citation
T. Puritis et al., PINCH EFFECT IN SILICON P-N-JUNCTION AT SECONDARY BREAKDOWN COMING INTO EXISTENCE, Solid-state electronics, 38(1), 1995, pp. 258-260
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
1
Year of publication
1995
Pages
258 - 260
Database
ISI
SICI code
0038-1101(1995)38:1<258:PEISPA>2.0.ZU;2-A