A 2D ANALYTIC FIELD-DEPENDENT-MOBILITY MODEL FOR THE IV-CHARACTERISTICS OF THIN-FILM FULLY-DEPLETED SOI MOSFETS

Authors
AGGARWAL V GUPTA RS
Citation
V. Aggarwal et Rs. Gupta, A 2D ANALYTIC FIELD-DEPENDENT-MOBILITY MODEL FOR THE IV-CHARACTERISTICS OF THIN-FILM FULLY-DEPLETED SOI MOSFETS, Solid-state electronics, 38(1), 1995, pp. 261-264
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
1
Year of publication
1995
Pages
261 - 264
Database
ISI
SICI code
0038-1101(1995)38:1<261:A2AFMF>2.0.ZU;2-Q