TEMPERATURE-DEPENDENCE OF SOLID-VAPOR COMPOSITIONAL RELATION IN EPITAXIAL-GROWTH OF GAASXSB1-X BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

GaAsxSb1-x was grown by low-pressure metalorganic chemical vapor depos ition (MOCVD) using triethylgallium (TEGa), trimethylantimony (TMSb) a nd tertiarybutylarsine (tBAs) as precursors. The entire range of compo sitions could be grown at the low temperature of about 420 degrees C. The relation of solid composition, x, to vapor phase composition, [tBA s/(TMSb + tBAs)], is very different from previous authors' results obt ained by normal pressure MOCVD using TMGa, TMSb and AsH3 as precursors . Our result, however, approaches their results when the growth temper ature is increased beyond 500 degrees C toward 550 degrees C.