COMPARISON OF ALTERNATE P-SOURCES TO PHOSPHINE IN THE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF P-ALGAINP

Authors
MANNOH M ISHIBASHI A OHNAKA K
Citation
M. Mannoh et al., COMPARISON OF ALTERNATE P-SOURCES TO PHOSPHINE IN THE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF P-ALGAINP, Journal of crystal growth, 145(1-4), 1994, pp. 158-163
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
145
Issue
1-4
Year of publication
1994
Pages
158 - 163
Database
ISI
SICI code
0022-0248(1994)145:1-4<158:COAPTP>2.0.ZU;2-Z
Abstract
Tertiarybutylphosphine (TBP) and bisphosphinoethane (BPE) have been st udied as alternatives to phosphine (PH3) in the metalorganic vapor pha se epitaxy (MOVPE) growth of Zn-doped p-type AlGaInP layers. Smooth su rfaces were obtained for both organometallic phosphorus sources even f or extremely low V/III ratios of 2 for BPE and 4 for TBP, compared wit h 35 for PH3 at a growth temperature of 710 degrees C with a V/III rat io as low as 75 exhibits strong photoluminescence intensity and a high electrical activity of Zn which are comparable to those obtained for the layers grown with PH3.