SELECTIVE-AREA EPITAXY OF GAINAS USING CONVENTIONAL AND NOVEL GROUP-III PRECURSORS

Selective area growth of GaInAs has been performed by low pressure met alorganic vapor phase epitaxy (MOVPE) on SiO2-masked InP substrates. T he growth rate and composition variations induced by the mask pattern have been evaluated by cathodoluminescence for two In precursors, trim ethylindium (TMI) and dimethylaminopropyl-dimethyl-indium (DADI) in co mbination with triethylgallium (TEG) and AsH3, and compared to model c alculations taking gas phase diffusion into account. The resulting cha racteristic parameter D/k could be attributed to the chemical stabilit y of the precursors. We found that the use of DADI results in a less p ronounced growth rate and In incorporation enhancement at the mask edg es than the use of TMI, but DADI still has to be labeled ''chemically less stable'' than TEG under MOVPE conditions. Gas phase reactions wit h the hydrides probably have to be taken into account to understand th ese findings.