ANALYSIS OF THE INPLANE BANDGAP DISTRIBUTION IN SELECTIVELY GROWN INGAAS INGAASP MULTIPLE-QUANTUM-WELL BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

The in-plane distribution of growth rate enhancement and bandgap (E(g) ) of the selectively grown InGaAs/In GaAsP multiple quantum well (MQW) structure using a twin stripe mask is investigated. The dependence of the growth rate enhancement and E(g) transition profile on the mask w idth and mask opening width is investigated experimentally, and discus sed by the simulation based on the vapor phase diffusion model of the re-evaporated reactant from the mask to the open area. Growth profile in the direction perpendicular to the stripe is explained by one-dimen sional vapor phase diffusion. Bandgap transition length along the mask opening stripe decreases with decreasing the mask width and the mask opening width. In-plane bandgap distribution is calculated by simple t wo-dimensional diffusion model, and the results are consistent with th e experimental data.