SIMULATION OF SPECIES TRANSPORT DURING GROWTH OF COMPOUND SEMICONDUCTORS OVER PATTERNED SUBSTRATES

A mathematical model is formulated for the simulation of selective epi taxial growth of A(3)B(5) ternary layers inside narrow trenches and st ripes during the metalorganic chemical vapor deposition (MOCVD) proces s. The approach consists of two connected steps: simulation of flow, h eat transfer and mass transport of the species in the reactor, and Mon te Carlo calculations of kinetic transport of the species inside the t rench. It is shown that such a combined approach can be used for predi cting the layer growth rate and composition distributions inside the t rench, and for studying the effects of the process parameters on the u niformity of the grown layer.