STRESS-DISTRIBUTION AND DISLOCATION DYNAMICS IN GAAS GROWN ON SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We have investigated, by photoluminescence measurement, the microscopi c stress distribution near the dislocation in GaAs grown on Si substra te and in planar homoepitaxial GaAs which was grown by metalorganic ch emical vapor deposition (MOCVD). It was found that a compressive stres s due to lattice deformation existed near the dislocation. Dislocation dynamics were observed by photoluminescence image while applying the external stress by a fine needle. Density and location of the dislocat ion could be artificially operated by some extent.