Y. Naoi et al., STRESS-DISTRIBUTION AND DISLOCATION DYNAMICS IN GAAS GROWN ON SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 145(1-4), 1994, pp. 321-325
We have investigated, by photoluminescence measurement, the microscopi
c stress distribution near the dislocation in GaAs grown on Si substra
te and in planar homoepitaxial GaAs which was grown by metalorganic ch
emical vapor deposition (MOCVD). It was found that a compressive stres
s due to lattice deformation existed near the dislocation. Dislocation
dynamics were observed by photoluminescence image while applying the
external stress by a fine needle. Density and location of the dislocat
ion could be artificially operated by some extent.