ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF INP AND INAS INP HETEROSTRUCTURES/

We report properties of InP, InAs/InP strained single quantum wells an d short-period InAs/InP strained layer superlattices grown by atomic l ayer epitaxy. A self-limiting growth close to 1 monolayer per cycle ha s been obtained for InP and InAs with low substrate temperatures of 35 0-360 degrees C. The samples were grown on InP (001) substrates and ch aracterized by high-resolution X-ray diffraction, Raman spectroscopy, high-resolution transmission electron microscopy, photoluminescence an d cathodoluminescence mapping. Using these techniques, we can demonstr ate self-limiting growth of 1 monolayer per cycle in atomic layer epit axy of InP, which has not been conclusively determined previously. Tra nsmission electron microscopy shows abrupt InAs/InP interfaces and sho ws directly the self-limiting growth of 1 monolayer per cycle for both InAs and InP. Low temperature photoluminescence of the epitaxial InP clearly distinguishes free and bound excitons. Cathodoluminescence map ping shows good sample homogeneity of the InAs/InP heterostructures.