LATTICE-RELAXATION IN LARGE MISMATCH SYSTEMS OF (111)CDTE (100)GAAS AND (133)CDTE/(211)GAAS LAYERS/

Differences between the progress of lattice relaxation in (111)CdTe/(1 00)GaAs and (133)CdTe/(211)GaAs heterostructures, in which large 14.6% lattice mismatches exist, were revealed by lattice images obtained by transmission electron microscopy and photoluminescence spectra of the layers. The lattice of the (133)CdTe layers on the (211)GaAs substrat es rotated to relax misfit strains around the [011] axis which was per pendicular to the growth direction and parallel to the (011) axis of t he substrate. On the other hand, the lattice of the (111)CdTe layers o n the (100)GaAs substrates rotated around the [111] axis parallel to t he growth direction, because the glide plane of (111)CdTe was inconsis tent with that of (100)GaAs. Our findings suggest that CdTe layers of higher structural quality are obtainable on (211)GaAs substrates than on (100) oriented substrates.