MISFIT DISLOCATION MICROSTRUCTURE AND KINETICS OF HGCDTE CDZNTE UNDERTENSILE AND COMPRESSIVE STRESS

The effects of interfacial lattice mismatch upon Hg1-xCdxTe epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) were in vestigated. HgCdTe was found to be easily affected by lattice mismatch of less than +0.1%. It has also been shown that mismatched HgCdTe lay ers in tension tend to deteriorate more easily than those in compressi on. This asymmetric phenomenon was explained using a schematic model o f the lattice structure. The asymmetric phenomenon is attributable to the asymmetric dislocation distribution due to the presence of excess mercury vacancies in addition to the sign of the misfit strain and the different lattice structure.