NOVEL NITROGEN-SOURCE MATERIALS IN ZINC SELENIDE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Novel nitrogen-based materials have been used as nitrogen sources in m etalorganic chemical vapor deposition (MOCVD) grown ZnSe. Ethylazide h as a high doping efficiency and the controllability of the doping conc entration is good. Photoluminescence spectra at 4.2 K revealed the pre sence of shallow acceptor levels in ZnSe. Hydrogen was incorporated in to the ZnSe layer at a similar concentration of that of nitrogen, alth ough the nitrogen-hydrogen bond did not exist in ethylazide. The high resistivity of the present samples was due to the hydrogen passivation . The formation of the N-H bond should be prevented in the growth atmo sphere.