METHYL(ALLYL)TELLURIDE AS A TE PRECURSOR FOR GROWTH OF (HG,CD)TE BY METALORGANIC VAPOR-PHASE EPITAXY

Methyl(allyl)telluride (Me(allyl)Te) has previously been used as a pre cursor for the metalorganic vapour phase epitaxy (MOVPE) growth of CdT e and HgTe. The decomposition reactions of Me(allyl)Te alone and in al l combinations with Me(2)Cd and Hg and in H-2 and He carrier gases hav e been studied using the technique of gas chromatography-mass spectrom etry. The main Te containing product from the decomposition of Me(ally l)Te alone is Me(2)Te(2) with little Te deposited. When Me(allyl)Te, M e(2)Cd and Hg were co-pyrolysed in H-2 at 350 degrees C the observed p roducts included methane, 1-butene, 1,5-hexadiene and Me(2)Te. A mecha nism for the decomposition is proposed. By comparison with (Pr2Te)-Te- i we would predict that Me(allyl)Te is not likely to be a good precurs or.