MODELING OF GROWTH IN A 5X3 INCH MULTIWAFER METALORGANIC VAPOR-PHASE EPITAXY REACTOR

Authors
BERGUNDE T DURST F KADINSKI L MAKAROV YN SCHAFER M WEYERS M
Citation
T. Bergunde et al., MODELING OF GROWTH IN A 5X3 INCH MULTIWAFER METALORGANIC VAPOR-PHASE EPITAXY REACTOR, Journal of crystal growth, 145(1-4), 1994, pp. 630-635
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
145
Issue
1-4
Year of publication
1994
Pages
630 - 635
Database
ISI
SICI code
0022-0248(1994)145:1-4<630:MOGIA5>2.0.ZU;2-H
Abstract
A detailed theoretical study of the growth of GaAs and AlGaAs in a mul tiwafer PLANET reactor has been performed and combined with experiment al verification. The effects of variations in temperature profile, flo w rate and flow distribution have been studied and basic trends have b een identified. Parasitic depositions on the reactor ceiling have been studied and their profile has been understood. Based on the investiga tions, thickness homogeneity was improved to better than +/-1% on 3 in ch wafers.