THERMAL AND FLOW ISSUES IN THE DESIGN OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION REACTORS

The influence of the equipment design and deposition process parameter s on the flow and temperature uniformity across the substrate for a ve rtical high speed metalorganic chemical vapor deposition (MOCVD) rotat ing disk reactor (RDR) was investigated. The substrate temperature uni formity was found to strongly depend upon process temperature and pres sure, reactant flow, and wafer carrier rotation speed. With a single-z one heater element, the temperature uniformity could be optimized only for a limited field of process parameters. We have demonstrated a sig nificant improvement to the substrate temperature uniformity over a wi de range of process parameters by utilizing a multi-zone heater.