DESIGN AND OPERATING CHARACTERISTICS OF A METALORGANIC VAPOR-PHASE EPITAXY PRODUCTION SCALE, VERTICAL, HIGH-SPEED, ROTATING-DISK REACTOR

The optoelectronic and digital compound semiconductor electronics indu stry is a critical area of development for the 90's and into the next century. Optoelectronic devices are used in all aspects of communicati ons (lasers and detectors) and displays (LEDs). High speed electronic devices find applications in wireless communications, microwave system s, and advanced computers. As production levels of these devices incre ase, so too does the need for economical and high yield production equ ipment. Production features must emphasize repeatability, improved saf ety, environmental compatibility, waste reduction, reliability (maximu m MTBF), serviceability (minimum MTTR), flexible manufacturing, integr ated manufacturing, and economics. In this paper, we report on the dev elopment and characteristics of such a large area MOVPE production Rot ating Disk Reactor system (300 mm diameter deposition platform). This new reactor has been used to produce multiple 4 inch GaAs/AlAs Bragg r eflectors with < 1.0% variation in peak reflectivity wavelength and to simultaneously demonstrate multiple 2 inch InGaP films with better th an +/- 1.5 nm photoluminescence wavelength uniformity.