K. Ishikura et al., CARBON GETTERING MECHANISM OF GAAS CHEMICAL BEAM EPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM, Journal of crystal growth, 145(1-4), 1994, pp. 687-691
It-was found that arsenic-dimethylamine (DMA) bonds rather than DMA it
self play an important role in the carbon gettering mechanism for GaAs
chemical beam epitaxy (CBE) using trisdimethylamino-arsine (TDMAAs) a
nd trimethylgallium (TMGa). The carbon gettering is inferred to occur
when the arsenic-dimethylamine bond breaks on the growing surface. Com
parison of mass spectra of TDMAAs and dimethyamine-gallane (DMAGa) sug
gests that a new compound is produced, which is thought to be related
with the carbon gettering, when the TDMAAs decomposes.