CARBON GETTERING MECHANISM OF GAAS CHEMICAL BEAM EPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM

Authors
ISHIKURA K TAKEUCHI A KURIHARA M NAKAGAWA M HASEGAWA F
Citation
K. Ishikura et al., CARBON GETTERING MECHANISM OF GAAS CHEMICAL BEAM EPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM, Journal of crystal growth, 145(1-4), 1994, pp. 687-691
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
145
Issue
1-4
Year of publication
1994
Pages
687 - 691
Database
ISI
SICI code
0022-0248(1994)145:1-4<687:CGMOGC>2.0.ZU;2-F
Abstract
It-was found that arsenic-dimethylamine (DMA) bonds rather than DMA it self play an important role in the carbon gettering mechanism for GaAs chemical beam epitaxy (CBE) using trisdimethylamino-arsine (TDMAAs) a nd trimethylgallium (TMGa). The carbon gettering is inferred to occur when the arsenic-dimethylamine bond breaks on the growing surface. Com parison of mass spectra of TDMAAs and dimethyamine-gallane (DMAGa) sug gests that a new compound is produced, which is thought to be related with the carbon gettering, when the TDMAAs decomposes.