METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND LUMINESCENCE PROPERTIESOF GAAS GAASP QUANTUM WIRES/

Metalorganic vapor phase epitaxy (MOVPE) of GaAs/GaAsP quantum wires ( QWRs) has been attempted on V-grooved GaAs (100) substrates. Intense p hotoluminescence (PL) from the wires as well as from the flat (100) qu antum well layers (QWLs) has been obtained. The excitation-power depen dence of the PL spectra confirms the efficient capture and confinement of free carriers in the wire regions. The top views of cathodolumines cence (CL) images show that the QWR structures have been successfully grown. The polarization of PL shows a strong optical anisotropy in QWR s due to two-dimensional quantum confinement. This is the first succes sful fabrication of GaAs/GaAsP QWR structures.