FABRICATION OF QUANTUM-WIRE STRUCTURES BY IN-SITU GAS ETCHING AND SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY REGROWTH

GaAs quantum wires (QWIs) buried on a V-shaped groove were successfull y fabricated by the selective-area in-situ gas etching and regrowth pr ocesses in the metalorganic vapor phase epitaxy (MOVPE) reactor. The V -shaped groove formation by in-situ KCI gas etching and the behavior o f selective growth in the V-groove were investigated. From the detail study, it was found that the AlGaAs-based quantum wires for the entire range of Al composition can be fabricated by the in-situ fabrication technique with high controllability. Clear photoluminescence peak from an arrowhead-shaped GaAs QWI completely surrounded by Al0.5Ga0.5As wa s obtained even at room temperature, indicating that the in-situ etchi ng/regrowth processes are a very promising technique for realizing hig h performance nanostructure devices such as QWIs.