ELIMINATION OF WAVY LAYER GROWTH PHENOMENA IN STRAIN-COMPENSATED GAINASP GAINASP MULTIPLE-QUANTUM-WELL STACKS/

A fifty period multiple quantum well stack composed of alternating lay ers of GaInAsP (100 Angstrom, +1% lattice mismatch) and GaInAsP (100 A ngstrom -1% lattice mismatch) has been grown with a minimum of strain relaxation. The strain-compensated structure was over 1 mu m thick, ex hibited an excellent high resolution X-ray diffraction rocking curve a nd had a low temperature photoluminescence linewidth of only 6 meV. Th e growth of this structure was made possible by suppressing the wavy l ayer growth phenomena. The onset of wavy layer growth can be delayed b y using a high V/III ratio in the gas phase and by choosing a growth t emperature high enough for the barrier composition to lie outside the Ga-In-As-P miscibility limit isotherm.