LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INAS GAAS SHORT-PERIOD SUPERLATTICES ON INP SUBSTRATES/

Short-period strained-layer superlattices (SPSLSs) could potentially f ind applications as replacements for the corresponding alloys combinin g superlattice effects with those associated to strain. For more funda mental research, SPSLS have attracted considerable interest due to the ir capability of exhibiting the physical behaviour of binary in horizo ntal and of ternary alloy in vertical direction. The characterization of interface qualities in dependence of growth parameters like growth temperature and layer growth time is of particular interest in such hi ghly strained heterostructure systems. In this work we will show the c apability of low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) growth for InAs/GaAs ultra-short period superlattices on InP substrat es. A detailed study of growth characteristics of highly strained extr emely thin InAs and GaAs layers on InP substrates was made. Single str ained layer heterostructures as well as SPSLS were grown. InAs/Ino(0.5 3)Ga(0.47)As, GaAs/In0.53Ga0.47As and InAs/GaAs/In0.53Ga0.47As superla ttice structures were grown with respect to the special requirements o f high resolution X-ray diffraction (HRXRD). Experimental rocking curv es were compared with computer aided simulations which confirmed our m ethod for individual layer thickness evaluation on the base of experim ental data solely.