CHARACTERIZATION OF THE INTERFACE ABRUPTNESS OF IN0.53GA0.47AS INP MULTI-QUANTUM-WELLS BY RAMAN-SPECTROSCOPY, X-RAY-DIFFRACTOMETRY AND PHOTOLUMINESCENCE/

For lattice-matched InGaAs/InP multi quantum well structures, the inte rface abruptness was investigated by a combination of X-ray diffractom etry, Raman spectroscopy and photoluminescence. The focus was on the e ffects of the gas switching parameters at the InGaAs-to-InP interface, especially the PH3 and H-2 purging times. Ternary InAsP and quaternar y InGaAsP interface layers due to carry-over and exchange effects were directly identified. Their thicknesses drastically depend on the PH3 purging time. H-2 purging affects the interface quality to some degree , but it has only minor effects on the chemical composition at the int erfaces.