LOW-THRESHOLD LAMBDA=1.3 MU-M MULTIQUANTUM-WELL LASER-DIODES GROWN BYMETALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE PRECURSORS

Low threshold lambda = 1.3 mu m InGaAsP multi-quantum well (MQW) laser s have been realized by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP). Quaternar y InGaAsP growth with TEA and TBP have demonstrated an improved group- V compositional controllability, compared to that with the conventiona l hydrides AsH3 and PH3. As a result, the base InGaAsP MQW wafers have exhibited an excellent photoluminescene (PL) wavelength uniformity wi th the standard deviation of 2.6 nm over a 2-inch wafer, and the PL fu ll width at half maximum (FWHM) of 8.3 meV at 4.2 K. Laser characteris tics, such as threshold and efficiency, were comparable to those grown by hydrides. The threshold currents for 70%/95% coated 170 mu m long devices were as low as 9 and 22 mA at 20 and 85 degrees C, respectivel y. Thus, TEA and TBP are applicable for long wavelength lasers as subs titutes for AsH3 and PH3.