M. Horita et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INGAASP MULTI-QUANTUM-WELLLASER-DIODES USING ENTIRELY ORGANIC SOURCES, Journal of crystal growth, 145(1-4), 1994, pp. 886-891
Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum w
ell (MQW) lasers was performed by using entirely organic compounds as
precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) a
nd organic doping sources were used. The quality of the hetero-interfa
ces was investigated by means of photoluminescence (PL) and transmissi
on electron microscopy (TEM). The difference between the cases using T
BP and PH, was described, focusing on the waiting time dependence of t
he hetero-interface quality. The PL FWHM measured at 4.2 K was as smal
l as 6.1 meV with optimized growth conditions, and the TEM images also
proved excellent hetero-interfaces of the MQW structure grown with TB
As and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW l
asers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold
current density of 710 A/cm(2), an internal loss of 15 cm(-1) and an
internal quantum efficiency of 70%.