METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INGAASP MULTI-QUANTUM-WELLLASER-DIODES USING ENTIRELY ORGANIC SOURCES

Metalorganic vapor phase epitaxy (MOVPE) of InGaAsP multiple quantum w ell (MQW) lasers was performed by using entirely organic compounds as precursors. Tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) a nd organic doping sources were used. The quality of the hetero-interfa ces was investigated by means of photoluminescence (PL) and transmissi on electron microscopy (TEM). The difference between the cases using T BP and PH, was described, focusing on the waiting time dependence of t he hetero-interface quality. The PL FWHM measured at 4.2 K was as smal l as 6.1 meV with optimized growth conditions, and the TEM images also proved excellent hetero-interfaces of the MQW structure grown with TB As and TBP. InGaAs/InGaAsP separate confinement heterostructure 3 QW l asers grown by entire organic source MOVPE (EOS-MOVPE) had a threshold current density of 710 A/cm(2), an internal loss of 15 cm(-1) and an internal quantum efficiency of 70%.