NOVEL PSEUDOMORPHIC STRUCTURE ON SI SUBSTRATE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

We propose a novel pseudomorphic InGaAs channel selectively doped stru cture grown on Si substrates and investigate its characteristics. The proposed structure consists of a Si-doped strained layer superlattice (SLS), an InGaAs channel layer, an SLS buffer layer, and a GaAs buffer layer. We investigated the SLS structure dependence of mobility. The mobility was enhanced by the reduction of the threading dislocation de nsity. We compared the characteristics of high electron mobility mobil ity transistors (HEMTs) fabricated using the epitaxial structures and conventional structures processed with thermal cycle annealing (TCA). The HEMTs with the proposed structure showed better characteristics th an those processed by TCA, indicating the efficiency of the structure.