LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/

Authors
DIFORTEPOISSON MA BRYLINSKI C DELAGE SL BLANCK H FLORIOT D CASSETTE S CHARTIER E PONS D
Citation
Ma. Difortepoisson et al., LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/, Journal of crystal growth, 145(1-4), 1994, pp. 983-985
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
145
Issue
1-4
Year of publication
1994
Pages
983 - 985
Database
ISI
SICI code
0022-0248(1994)145:1-4<983:LGGGHF>2.0.ZU;2-R