FIRST RESULTS ON SILICON-CARBIDE VAPOR-PHASE EPITAXY GROWTH IN A NEW-TYPE OF VERTICAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR

In this paper a new concept for silicon carbide vapour phase epitaxy ( VPE) will be presented. It is based on the rotating disk technology we ll known in the field of III-V epitaxy. First results will be given sh owing excellent structural quality of the epitaxial layers together wi th high growth rates up to 5 mu m/h and good uniformity of layer thick ness over 1 inch wafers. The C/Si-ratio in the process can be varied o ver a wide range (0.35-2.3 at 3 mu m/h) without loss of surface qualit y. This enables a precise control of the site competition effect and,t herefore, of the incorporation of acceptor and donor impurities. Thus, non-intentionally doped p- (C/Si > 1) and n-type, (C/Si < 0.7) epilay ers with carrier concentrations considerably below 10(16) cm(-3) can b e grown.