IN-SITU OBSERVATION OF CHEMICAL-VAPOR-DEPOSITION GROWTH OF EPITAXIAL SIGE THIN-FILMS BY REFLECTION SUPPORTED PYROMETRIC INTERFEROMETRY

Reflexion supported pyrometric interferometry (PYRITTE) has been used for the in-situ observation of Si-(1-x)Ge-x heteroepitaxial growth on Si-wafers in a rapid thermal chemical vapour deposition (RTCVD)-reacto r at 500 degrees C. The thickness and the optical parameters of thin f ilms at 500 degrees C have been evaluated by real time computer fittin g of the measured reflectivity data at the wavelength lambda = 650 nm. These parameters have been compared with those obtained ex-situ at ro om temperature by ellipsometry in the wavelength range 240-700 nm. The thickness of growing Si-(1-x)Ge-x film depends on time linearly. The temperature coefficient of the real part of the refractive index has b een found as 3 x 10(-4) K-1.